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| CFY27 HiRel Ku-Band GaAs General Purpose MESFET * * * * * * * HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package High gain, medium power Component Under Development Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 06 and 07 foreseen (tbc.) 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY27-38 (ql) CFY27-P (ql) - see below G Micro-X CFY27-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62703F121 on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, September 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230 Unit V V V mA mA dBm C C mW C Rth JS 150 (tbc.) K/W 1) For VDS 5 V. For VDS > 5 V, derating is required. 2) At TS = + 40 C. For TS > + 40 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 9 Draft D, September 99 CFY27 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 1 mA Drain current at pinch-off VDS = 3 V, VGS = - 4 V Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V Transconductance VDS = 3 V, ID = 120 mA Gate leakage current at operation VDS = 3 V, ID = 120 mA Thermal resistance junction to soldering point IDss -VGth IDp 150 1.0 270 2.0 < 12 420 3.2 60 mA V A -IGp - < 12 30 A gm120 130 160 - mS -IG120 - <3 - A Rth JS - 125 - K/W Semiconductor Group 3 of 9 Draft D, September 99 CFY27 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Noise figure 1) VDS = 3 V, ID = 120 mA, f = 12 GHz CFY27-P CFY27-38 Associated gain. 1) VDS = 3 V, ID = 120 mA, f = 12 GHz CFY27-P CFY27-38 Output power at 1 dB gain compression 2) P1dB VDS = 5 V, ID(RF off) = 120 mA, f = 2.3 GHz CFY27-P CFY27-38 Linear power gain 2) VDS = 5 V, ID = 120 mA, f = 2.3 GHz, Pin = 0 dBm CFY27-P CFY27-38 Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Glp 24.5 26 > 25 dB Ga 7.5 > 7.8 8.0 dBm NF < 3.6 3.5 3.8 dB dB 17.5 - 19 > 18 - Semiconductor Group 4 of 9 Draft D, September 99 CFY27 Typical Common Source S-Parameters CFY27 V DS = 3 V, I D = 120 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,936 0,921 0,904 0,890 0,876 0,864 0,854 0,846 0,837 0,830 0,823 0,816 0,810 0,804 0,799 0,795 0,791 0,788 0,784 0,781 0,779 0,776 0,773 0,771 0,769 0,767 0,765 0,764 0,763 0,762 0,761 0,758 0,757 0,759 0,761 0,763 0,764 0,766 0,768 0,771 0,775 0,780 0,787 0,794 0,802 0,810 0,816 0,823 0,829 0,835 0,841 0,846 0,851 0,857 0,863 0,869 0,874 0,881 0,887 0,895 Semiconductor Group 5 of 9 Draft D, September 99 CFY27 Typical Common Source S-Parameters CFY25-20 (continued) V DS = 5 V, I D = 120 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,937 0,922 0,905 0,889 0,876 0,866 0,857 0,848 0,839 0,832 0,826 0,819 0,813 0,807 0,804 0,800 0,796 0,793 0,790 0,788 0,785 0,784 0,782 0,780 0,778 0,776 0,775 0,774 0,773 0,773 0,772 0,773 0,774 0,777 0,779 0,781 0,784 0,787 0,791 0,796 0,801 0,808 0,816 0,824 0,833 0,842 0,850 0,857 0,862 0,866 0,871 0,874 0,878 0,881 0,883 0,886 0,890 0,892 0,897 0,901 Semiconductor Group 6 of 9 Draft D, September 99 CFY27 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CFY27 -(nnl) (ql) -(nnl): Noise Figure and/or Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62703F121 CFY27-P P For CFY27, Gain/Power Level P: P1dB > 25 dBm in Professional Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: Address: ++89 234 24480 ++89 234 28438 e-mail: martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 7 of 9 Draft D, September 99 CFY27 Micro-X Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 8 of 9 Draft D, September 99 |
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